npn TIP110-111-112 05/10/2012 comset semiconductors 1 |3 semiconductors silicon darlington power transistors npn epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 enveloppe. they are designed for general purpose amplifier and low-speed switching applications. pnp complements are tip115-116-117 compliance to rohs . absolute maximum ratings symbol ratings value unit v cbo collector-base voltage TIP110 60 v tip111 80 tip112 100 v ceo collector-emitter voltage TIP110 60 v tip111 80 tip112 100 v ebo emitter-base voltage TIP110 5 v tip111 tip112 i c collector current TIP110 2 a tip111 tip112 i cm collector peak current TIP110 4 a tip111 tip112 i b base current TIP110 50 ma tip111 tip112 p t power dissipation @ t c < 25 TIP110 50 watts tip111 tip112 @ t a < 25 TIP110 2 tip111 tip112 t j junction temperature TIP110 150 c tip111 tip112 t s storage temperature range TIP110 -65 to +150 tip111 tip112
npn TIP110-111-112 05/10/2012 comset semiconductors 2 |3 semiconductors thermal characteristics symbol ratings value unit r thj-case from junction-case TIP110 2.5 c/w tip111 tip112 r thj-amb from junction-ambient TIP110 62.5 c/w tip111 tip112 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current i e = 0,v cb = v cbo max TIP110 - - 1 ma tip111 tip112 i ceo collector cutoff current i e = 0, v ce = 1/2 v ceo max TIP110 - - 2 ma tip111 tip112 i ebo emitter cutoff current v eb = 5 v, i c = 0 TIP110 - - 2 ma tip111 tip112 v ceo collector-emitter breakdown voltage (*) i c = 30 ma, i b = 0 TIP110 60 - - v tip111 80 - - tip112 100 - - v ce(sat) collector-emitter saturation voltage (*) i c = 2 a, i b = 8 ma TIP110 - - 2.5 v tip111 tip112 v be(on) base-emitter voltage (*) i c = 2 a, v ce = 4 v TIP110 - - 2.8 v tip111 tip112 h fe dc current gain (*) v ce = 4 v, i c = 1 a TIP110 1000 - - - tip111 tip112 v ce = 4 v, i c = 2 a TIP110 500 - - tip111 tip112 c ob output capacitance i e = 0, v cb = 10 v f= 0.1mhz TIP110 - - 100 pf tip111 tip112 (*) pulse width 300 s, duty cycle 2.0%
npn TIP110-111-112 05/10/2012 comset semiconductors 3 |3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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